semiconductors summary v (br)dss = 60v; r ds(on) = 0.300 i d = 1.2a description this new generation of trench mosfets from zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? relay and solenoid driving ? motor control device marking ? 7n6 ZXMN6A07F issue 5 - september 2003 60v n-channel enhancement mode mosfet 1 top view pinout sot23 device reel size tape width quantity per reel ZXMN6A07Fta 7? 8mm 3000 units ZXMN6A07Ftc 13? 8mm 10000 units ordering information
ZXMN6A07F semiconductors issue 5 - september 2003 2 parameter symbol limit unit drain-source voltage v dss 60 v gate-source voltage v gs 20 v continuous drain current v gs =10v; t a =25c(b) v gs =10v; t a =70c(b) v gs =10v; t a =25c(a) i d 1.2 1.0 1.1 a pulsed drain current (c) i dm 5.6 a continuous source current (body diode) (b) i s 1a pulsed source current (body diode)(c) i sm 5.6 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings parameter symbol v alue unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w thermal resistance notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pc, d =0.02, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph.
characteristics ZXMN6A07F semiconductors issue 5 - september 2003 3
ZXMN6A07F semiconductors issue 5 - september 2003 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 60 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =60v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.300 0.450 ? ? v gs =10v, i d =1.8a v gs =4.5v, i d =1.3a forward transconductance (3) g fs 2.3 s v ds =15v,i d =1.8a dynamic (3) input capacitance c iss 166 pf v ds =40v,v gs =0v, f=1mhz output capacitance c oss 19.5 pf reverse transfer capacitance c rss 8.7 pf switching (2) (3) turn-on delay time t d(on) 1.8 ns v dd =30v, i d =1.8a r g ? 6.0 ? ,v gs =10v rise time t r 1.4 ns turn-off delay time t d(off) 4.9 ns fall time t f 2.0 ns gate charge q g 1.65 nc v ds =30v, v gs =5v, i d =1.8a total gate charge q g 3.2 nc v ds =30v,v gs =10v, i d =1.8a gate-source charge q gs 0.67 nc gate-drain charge q gd 0.82 nc source-drain diode diode forward voltage (1) v sd 0.8 0.95 v t j =25c, i s =0.45a, v gs =0v reverse recovery time (3) t rr 20.5 ns t j =25c, i f =1.8a, di/dt= 100a/ s reverse recovery charge (3) q rr 21.3 nc electrical characteristics (at ta = 25c unless otherwise stated) notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMN6A07F semiconductors issue 5 - september 2003 5 typical characteristics
ZXMN6A07F semiconductors issue 5 - september 2003 6 110 0 20 40 60 80 100 120 140 160 180 200 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds - drain - source voltage (v) 0123 0 2 4 6 8 10 i d =1.8a v ds = 30v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) typical characteristics
ZXMN6A07F semiconductors issue 5 - september 2003 7 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 package outline pad layout dim millimetres inches dim millimetres inches min max min max min max min max a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c 1.10 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom 10 typ 10 typ package dimensions controlling dimensions in millimetres. approx conversions inches.
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